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QFET P-CHANNEL
FQPF3P20
FEATURES
BVDSS = -200V * * * * * * * * Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 6.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 2.06 (Typ.)
1 2 3
RDS(ON) = 2.7 ID = -2.2A
TO-220F
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25C) Continuous Drain Current (TC = 100C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds y x x z x Value -200 -2.2 -1.39 -8.8 30 150 -2.2 3.2 -5.5 32 0.26 -55 to +150 C 300 Units V A A V mJ A mJ V/ns W W/C
THERMAL RESISTANCE
Symbol RJC RJA Characteristics Junction-to-Case Junction-to-Ambient Typ. - - Max. 3.9 62.5 Units C/W
REV. B
1
(c) 1999 Fairchild Semiconductor Corporation
FQPF3P20
QFET P-CHANNEL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (Miller) Charge Min. -200 - -3.0 - - - - - - - - - - - - - - - - Typ. - -0.18 - - - - - 2.06 1.15 190 45 7.5 8.5 35 12 25 6.0 1.7 2.9 Max. - - -5.0 -100 100 -1 -10 2.7 - 250 60 10 25 80 35 60 8.0 - - nC VDS=-160V, VGS=-10V ID=-2.8A See Fig 6 & Fig 12 { | ns VDD=-100V, ID=-2.8A RG=50 See Fig 13 {| pF A S Units V V/C V nA Test Conditions VGS=0V, ID=-250A ID=-250A,
See Fig 7
VDS=-5V, ID=-250A VGS=-30V VGS= 30V VDS=-200V VDS=-160V, TC=125C VGS=-10V, ID=-1.1A VDS=-40V, ID=-1.1A VGS=0V, VDS=-25V f=1MHz See Fig 5 { {
IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD trr Qrr Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge x { Min. - - - - - Typ. - - - 100 0.34 Max. -2.2 -8.8 -5.0 - - Units A V ns C Test Conditions Integral reverse pn-diode in the MOSFET TJ=25C, IS=-2.2A, VGS=0V TJ=25C, IF=-2.8A, VDD=-160V diF/dt=100A/s {
Notes: x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature y L=46.5mH, IAS=-2.2A, VDD=-50V, RG=25, Starting TJ =25C z ISD -2.8A, di/dt 300A/s, VDD BVDSS, Starting TJ =25C { Pulse Test: Pulse Width 300s, Duty Cycle 2% | Essentially Independent of Operating Temperature
2
QFET P-CHANNEL
FQPF3P20
Fig 1. Output Characteristics
VGS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V
Fig 2. Transfer Characteristics
-I D, Drain Current [A]
10
0
-I D , Drain Current [A]
10
0
150E
25E -55E
O Note 1. VDS = -40V 2. 250is Pulse Test
10
-1
O Note : 1. 250is Pulse Test 2. TC = 25E
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
10
Fig 4. Source-Drain Diode Forward Voltage
RDS(on) , [ ] Drain-Source On-Resistance
8 VGS = - 10V 6 VGS = - 20V 4
-I DR , Reverse Drain Current [A]
10
0
150E
25E
2
O Note : TJ = 25E
O Note : 1. VGS = 0V 2. 250is Pulse Test
0 0 2 4 6 8
10
-1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
12
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = -40V VDS = -100V
8
400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
-V GS , Gate-Source Voltage [V]
300
Capacitances [pF]
Ciss Coss
VDS = -160V
6
200
O Note ; 1. VGS = 0 V 2. f = 1 MHz
4
Crss
100
2
O Note : ID = -2.8 A
0 -1 10
0
10
0
10
1
0
1
2
3
4
5
6
7
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
FQPF3P20
QFET P-CHANNEL
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
Fig 8. On-Resistance vs. Temperature
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
1.1
R DS(ON) , (Normalized) Drain-Source On-Resistance
2.0
1.5
1.0
1.0
0.9
O Note : 1. VGS = 0 V 2. ID = -250 iA
0.5
O Note : 1. VGS = -10 V 2. ID = -1.4 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
Operation in This Area is Limited by R DS(on)
Fig 10. Max. Drain Current vs. Case Temperature
2.5
10
1
2.0
1 ms
-I D, Drain Current [A]
10 ms 100 ms
10
0
-I D, Drain Current [A]
1.5
DC
1.0
10
-1
O Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.5
10
-2
10
0
10
1
10
2
0.0 25
50
75
100
125
150
-VDS, Drain-Source Voltage [V]
[C] TC, Case Temperature [E]
Fig 11. Thermal Response
(t ) , T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
O N o te s : 1 . Z eJ C ( t ) = 3 . 9 E / W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z eJ C ( t )
10
-1
0 .0 2 0 .0 1
PDM t1 t2
s in g le p u ls e
Z
10
-2
eJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
QFET P-CHANNEL
FQPF3P20
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
-10V
VGS
Qgs
Qgd
DUT
-3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
td(on)
t on tr td(off)
t off tf
Vin
10%
-10V
DUT VDS
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT IAS BVDSS VDD
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
tp
Time VDS (t)
ID (t) -10V
5
FQPF3P20
QFET P-CHANNEL
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Compliment of DUT (N-Channel)
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
6
QFET P-CHANNEL
FQPF3P20
TO-220F Package Dimensions
TO-220F (FS PKG CODE AQ)
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
September 1999, Rev B
15.87 0.20
7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SetiesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHOLD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. The datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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